Negative Bias Temperature Instability 负偏压温度不稳定性 ; 不稳定性 ; 负栅压偏置不稳定性 ; 负偏压温度不稳定效应
bias temperature sensitivity 零偏温度灵敏度
Bias Temperature Instability 偏压温度不稳定性
negative bias temperature 器件在负偏压温度 ; 负偏压温度
high-temperature reverse-bias burn-in 高温反向偏压老化测试
high-temperature reverse-bias 高温反向偏压
High temperature gate bias 高温偏压
temperature bias 温度漂移
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding.
主要之制程参数包括气源中之氢气含量、电浆前处理、材偏压、积温度以及电浆导流板之施加。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
应用推荐